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1. product profile 1.1 general description low capacitance bidirectional electrostati c discharge (esd) protection diode designed to protect one signal line from the damage caused by esd and other transients. the device is housed in a sod882d leadless ultra small surface-mounted device (smd) plastic package with visible and solderable side pads. 1.2 features and benefits 1.3 applications 1.4 quick reference data PESD5V0S1BLD low capacitance bidirectional esd protection diode rev. 1 ? 12 october 2010 product data sheet ? bidirectional esd protection of one line ? esd protection up to 30 kv ? ultra small smd plastic package ? iec 61000-4-2; level 4 (esd) ? solderable side pads ? iec 61000-4-5 (surge); i pp =12a ? package height typ. 0.37 mm ? max. peak pulse power: p pp =130w ? low clamping voltage: v cl =14v ? ultra low leakage current: i rm =5na ? aec-q101 qualified ? computers and peripherals ? communication systems ? audio and video equipment ? portable electronics ? cellular handsets and accessories table 1. quick reference data t amb =25 c unless otherwise specified. symbol parameter conditions min typ max unit per diode v rwm reverse standoff voltage - - 5.0 v c d diode capacitance f = 1 mhz; v r = 0 v - 35 45 pf
PESD5V0S1BLD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 12 october 2010 2 of 13 nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode 2. pinning information [1] the marking bar indicates cathode 1. 3. ordering information 4. marking [1] for sod882d binary marking code description, see figure 1 . 4.1 binary marking code description table 2. pinning pin description simplified outline graphic symbol 1 cathode 1 [1] 2 cathode 2 transparent top view 2 1 006aab0 41 12 table 3. ordering information type number package name description version PESD5V0S1BLD - leadless ultra small plastic package; 2 terminals; body 1.0 0.6 0.4 mm sod882d table 4. marking codes type number marking code [1] PESD5V0S1BLD 1100 0000 fig 1. sod882d binary marking code description vendor code marking code (example) cathode bar reading direction reading direction reading example: 0111 1011 006aac47 7
PESD5V0S1BLD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 12 october 2010 3 of 13 nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode 5. limiting values [1] non-repetitive current pulse 8/20 s exponential decay waveform according to iec 61000-4-5. [1] device stressed with ten non-repetitive esd pulses. [2] measured from pin 1 to pin 2. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per diode p pp peak pulse power t p =8/20 s [1] -130w i pp peak pulse current t p =8/20 s [1] -12a t j junction temperature - 150 c t amb ambient temperature ? 55 +150 c t stg storage temperature ? 65 +150 c table 6. esd maximum ratings t amb =25 c unless otherwise specified. symbol parameter conditions min max unit v esd electrostatic discharge voltage iec 61000-4-2 (contact discharge) [1] [2] -30kv mil-std-883 (human body model) -10kv table 7. esd standards compliance standard conditions iec 61000-4-2; level 4 (esd) > 15 kv (air); > 8 kv (contact) mil-std-883; class 3 (human body model) > 4 kv
PESD5V0S1BLD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 12 october 2010 4 of 13 nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode 6. characteristics [1] non-repetitive current pulse 8/20 s exponential decay waveform according to iec 61000-4-5. [2] measured from pin 1 to pin 2. [3] non-repetitive current pulse; transmission line pulse (tlp) t p = 100 ns; square pulse; ansi/esd stm5.1-2008. fig 2. 8/20 s pulse waveform according to iec 61000-4-5 fig 3. esd pulse waveform according to iec 61000-4-2 t ( s) 040 30 10 20 001aaa630 40 80 120 i pp (%) 0 e ? t 100 % i pp ; 8 s 50 % i pp ; 20 s 001aaa63 1 i pp 100 % 90 % t 30 ns 60 ns 10 % t r = 0.7 ns to 1 ns table 8. characteristics t amb =25 c unless otherwise specified. symbol parameter conditions min typ max unit per diode v rwm reverse standoff voltage - - 5.0 v i rm reverse leakage current v rwm = 5.0 v - 5 100 na v br breakdown voltage i r =1ma 5.5- 9.5v c d diode capacitance f = 1 mhz; v r =0v -3545pf v cl clamping voltage [1] [2] i pp =1a - - 10 v i pp =12a - - 14 v r dyn dynamic resistance [2] [3] i r =10a - 0.1 - i r = ? 10 a - 0.15 -
PESD5V0S1BLD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 12 october 2010 5 of 13 nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode t amb =25 c fig 4. peak pulse power as a function of exponential pulse duration; typical values fig 5. relative variation of peak pulse power as a function of junction temperature; typical values f=1mhz; t amb =25 c fig 6. diode capacitance as a function of reverse voltage; typical values fig 7. relative variation of reverse leakage current as a function of junction temperature; typical values 001aaa202 t p ( s) 110 4 10 3 10 10 2 10 2 10 3 p pp (w) 10 t j ( c) 0 200 150 50 100 001aaa633 0.4 0.8 1.2 p pp 0 p pp(25 c) 001aaa203 v r (v) 05 4 23 1 30 26 34 38 c d (pf) 22 001aaa204 t j ( c) 75 150 125 100 10 1 10 2 10 ? 1 i rm(tj) i rm(tj=85 c)
PESD5V0S1BLD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 12 october 2010 6 of 13 nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode fig 8. v-i characteristics for a bidirectional esd protection diode 006aaa67 6 ? v cl ? v br ? v rwm v cl v br v rwm ? i rm i rm ? i r i r ? i pp i pp ? +
PESD5V0S1BLD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 12 october 2010 7 of 13 nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode fig 9. esd clamping test setup and waveforms 50 r z c z dut (device under test) gnd gnd 450 rg 223/u 50 coax esd tester iec 61000-4-2 network c z = 150 pf; r z = 330 4 ghz digital oscilloscope 10 attenuator unclamped +8 kv esd pulse waveform (iec 61000-4-2 network) unclamped ? 8 kv esd pulse waveform (iec 61000-4-2 network) vertical scale = 2 kv/div horizontal scale = 15 ns/div vertical scale = 2 kv/div horizontal scale = 15 ns/div gnd clamped +8 kv esd pulse waveform (iec 61000-4-2 network) pin 1 to 2 vertical scale = 10 v/div horizontal scale = 10 ns/div 006aac49 3 gnd clamped ? 8 kv esd pulse waveform (iec 61000-4-2 network) pin 1 to 2 vertical scale = 10 v/div horizontal scale = 10 ns/div
PESD5V0S1BLD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 12 october 2010 8 of 13 nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode 7. application information the PESD5V0S1BLD is designed for the protecti on of one bidirectional data or signal line from the damage caused by esd and surge pulses. the device may be used on lines where the signal polarities are both, positi ve and negative with respect to ground. the PESD5V0S1BLD provides a surge capab ility of 130 w per line for an 8/20 s waveform. circuit board layout and pr otection device placement circuit board layout is critic al for the suppression of esd, electrical fast transient (eft) and surge transients. the following guidelines are recommended: 1. place the device as close to the in put terminal or connector as possible. 2. the path length between the device an d the protected line should be minimized. 3. keep parallel signal paths to a minimum. 4. avoid running protected conductors in parallel with unprotected conductors. 5. minimize all printed-circuit board (pcb ) conductive loops including power and ground loops. 6. minimize the length of the transient return path to ground. 7. avoid using shared transient return paths to a common ground point. 8. ground planes should be used whenever possible. for multilayer pcbs, use ground vias. 8. test information 8.1 quality information this product has been qualified in accordance with the automotive electronics council (aec) standard q101 - stress test qualificat ion for discrete semiconductors , and is suitable for use in automotive applications. fig 10. application diagram 006aaa05 7 pesd5v0s1bx gnd signal line
PESD5V0S1BLD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 12 october 2010 9 of 13 nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode 9. package outline 10. packing information [1] for further information and the avai lability of packing methods, see section 14 . 11. soldering fig 11. package outline PESD5V0S1BLD (sod882d) 10-08-06 dimensions in mm 0.65 0.30 0.22 0.30 0.22 0.55 0.45 0.65 0.55 0.4 max 1.05 0.95 2 cathode marking on top side 1 table 9. packing methods the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number package description packing quantity 10000 PESD5V0S1BLD sod882d 2 mm pitc h, 8 mm tape and reel -315 reflow soldering is the only recommended soldering method. fig 12. reflow soldering foot print PESD5V0S1BLD (sod882d) solder lands solder resist solder paste sod882d_ fr dimensions in mm 1.4 0.2 0.3 0.4 1 1.3 0.8 (2 ) 0.6 (2 ) 0.7 (2 )
PESD5V0S1BLD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 12 october 2010 10 of 13 nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode 12. revision history table 10. revision history document id release date data sheet status change notice supersedes PESD5V0S1BLD v.1 20101012 product data sheet - -
PESD5V0S1BLD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 12 october 2010 11 of 13 nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
PESD5V0S1BLD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 12 october 2010 12 of 13 nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PESD5V0S1BLD low capacitance bidirectional esd protection diode ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 12 october 2010 document identifier: PESD5V0S1BLD please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4.1 binary marking code description. . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 application information. . . . . . . . . . . . . . . . . . . 8 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 packing information . . . . . . . . . . . . . . . . . . . . . 9 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 contact information. . . . . . . . . . . . . . . . . . . . . 12 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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